Optoelectronics, which detect or emit light, traditionally rely on thin transistors from graphene and other two-dimensional materials. However, these materials often struggle with band gap opening, leading researchers to explore the Lewis acid treatment method to improve the performance of optoelectronic devices. With its unique physical properties and long-term stability in ambient air, Palladium diselenide (PdSe2) demonstrates impressive device performance. Researchers used the Lewis acid treatment to create p-type and n-type doped PdSe2 in a controlled manner. The controlled doping level can alter the energy bandgap of the palladium diselenide, enriching the selection and design of the p-n junction.
To test this method, researchers prepared a pristine film of palladium diselenide and modified it using the Lewis acid treatment. The researchers confirmed the presence of tin, palladium, and selenium peaks, proving that tin could be used as a p-type dopant. Further tests showed that the threshold voltage of the palladium diselenide could be controlled based on the tin chloride concentration.
The researchers plan to scale the processing of these two-dimensional materials and demonstrate the applications of p-type doped palladium diselenide in electronic components like field-effect transistors, photodetectors, and light emitters. They aim to optimize the semiconductor doping method for mass production in the semiconductor industry. The ultimate goal is to integrate palladium diselenide-based transistors and photodetectors with polymer-based strain sensors in flexible substrates, resulting in a smart biomedical system for human health care monitoring applications.
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