Because of its significant optical nonlinearity, wide transparency window, and strong electro-optic coefficient, thin-film lithium niobate (TFLN) presents a viable platform for integrated photonics. However, to fully utilize TFLN, additional lasers and photodetectors are necessary.
Researchers merged a modified uni-traveling carrier photodiode wafer to improve bandwidth and responsiveness onto a TFLN wafer. LN waveguides and passive components had to be dry-etched, metal-plated, and polished throughout fabrication. The team adjusted the structure to have a high responsiveness and wide bandwidth.
Researchers merged a modified uni-traveling carrier (MUTC) photodiode wafer to improve bandwidth and responsiveness onto a TFLN wafer. The TFLN platform’s responsiveness and bandwidth are both increased concurrently by the MUTC photodiode. LN waveguides and passive components had to be dry-etched, metal-plated, and polished throughout fabrication. The team adjusted the structure to have a high responsiveness and wide bandwidth.
The group is taking a big stride toward a thin-film lithium niobate-based integrated photonics platform in optical communications by integrating ultrawideband photodiodes on a TFLN platform, therefore solving the difficulty of LN in realizing light sources and photodetectors. The investigators showcased the possible application of heterogeneously integrated photodiodes on a TFLN platform in the upcoming generation of high-speed transmission systems. This study makes massive-scale, multipurpose, high-performance TFLN photonic integrated circuits possible. It also has potential applications in multifunctional, integrated quantum photonics, high-performance integrated microwave photonics, and ultrahigh-speed optical communications.
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