A group of researchers has developed a high-conductivity material, molybdenum disulfide (MoS2), that could significantly reduce contact resistance and Schottky barrier height within critical parts of electronic and optoelectronic microchips, paving the way for computer and digital imaging components to consume less power relative to their performance than current chipsets.
Molybdenum disulfide (MoS2) is so thin that it is classified as two-dimensional. It is grown in sheets extending in two directions, X and Y. Still, it is virtually immeasurable on the Z axis because the material is frequently only a single molecule or atom in height.
The authors emphasize how 2D materials have sparked a lot of interest because of their great and tunable electronic states, as well as their diverse optical, electronic, and mechanical properties, which make them promising building blocks for future high-performance electronic and optoelectronic devices like transistors, photodetectors, and light-emitting diodes.
The experiment was an attempt to address the issue. The microscopic connections between components within a chip primarily determine the performance of a 2D semiconductor transistor. The quality of those connections is ultimately determined by the material used in these contact points, which are always metals achieved through thermal evaporation.
The team used bismuth telluride (Bi2Te3), a highly conductive metalloid and semimetal, in combination with semiconducting molybdenum disulfide (MoS2) to create a higher-performing contact point. Growing these metalloid nanosheet crystals as a hybrid produced promising results at first.
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