Semiconductor quantum dots (QDs) that emit light in the near- and mid-infrared (IR) spectral ranges have the potential to power a range of optical devices. However, fundamental physical limitations decrease the intensity of IR-emitting QDs. At longer wavelengths, the quantum yield of such QDs decreases as the radiative emission rate drops following Fermi’s golden rule, while nonradiative recombination channels compete with light emission.
Scientists from Far Eastern Federal University (FEFU) and the Far East Branch of the Russian Academy of Sciences (FEB RAS), working with international colleagues, overcame these limitations by applying a special resonant lattice of nanostructures to mercury telluride (HgTe) QDs.
They designed a resonant lattice laser that allowed control of the near- and mid-IR radiation properties of the capping layer of the HgTe QDs. They formed the lattice by ultraprecise direct femtosecond laser printing on the surface of a thin gold film.
“The plasmon lattice we developed consists of millions of nanostructures arranged on the gold film surface. We produced such lattice using advanced direct laser processing. This fabrication technology is inexpensive compared to existing commercial lithography-based methods, easily upscalable, and allows facile fabrication of nanostructures over centimeter-scale areas,” FEFU researcher Aleksander Kuchmizhak said.