Direct Laser Writing On Halide Perovskites For Optoelectronics

Metal halide perovskites are gaining popularity due to their superior optoelectronic features, which include a high photoluminescence quantum yield (QY), absorption coefficient, tunable band gaps, long carrier diffusion lengths, and defect tolerance. Direct laser writing (DLW) is an efficient, contactless, mask-free, and depth-resolved micro-patterning technology that involves linking a laser beam to a high-resolution microscope. The resolution of DLW is determined by the diameter of the output focal point and the material’s threshold response.

DLW research advances our understanding of how light interacts with perovskites, paving the way for better-performing optoelectronic devices. A review summarizes recent advances in DLW on perovskites, focusing on six specific interaction mechanisms: laser ablation, laser-induced crystallization, laser-induced ion migration, laser-induced phase segregation, laser-induced photoreaction, and other laser-induced transitions.

The benefits of patterned structures are underlined, and contemporary DLW problems on perovskites are discussed. Lasers are a useful tool for modifying nano/microstructures on semiconductors, as they provide high precision, contactless operation, and mask-free operation. The laser determines the specific interaction mechanism, which includes wavelength, pulse/CW, power, and repetition rate.

Direct laser writing (DLW) on perovskites has many applications in microelectronics, photonics, and optoelectronics. However, to advance progress, technical limitations such as DLW technique resolution, existing time of segregated phases, and micropatterning techniques for flexible substrates must be addressed.

Read more

Related Content: Liquid Crystals And Lasers Team Up For Light Control